Toshiba Type N-Channel MOSFET, 65 A, 40 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 171-2428
- Mfr. Part No.:
- TK65S04N1L
- Manufacturer:
- Toshiba
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 reel of 2000 units)*
HK$17,856.00
FREE delivery for orders over HK$250.00
In Stock
- 2,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2000 - 2000 | HK$8.928 | HK$17,856.00 |
| 4000 - 6000 | HK$8.66 | HK$17,320.00 |
| 8000 + | HK$8.40 | HK$16,800.00 |
*price indicative
- RS Stock No.:
- 171-2428
- Mfr. Part No.:
- TK65S04N1L
- Manufacturer:
- Toshiba
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 65A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 107W | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.3mm | |
| Width | 7 mm | |
| Length | 6.5mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 65A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 107W | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Maximum Operating Temperature 175°C | ||
Height 2.3mm | ||
Width 7 mm | ||
Length 6.5mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
RoHS Status: Exempt
- COO (Country of Origin):
- JP
Applications
Automotive
Motor Drivers
Switching Voltage Regulators
Features
Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ
Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)
Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.3 mA)
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