Toshiba Type N-Channel MOSFET, 65 A, 40 V Enhancement, 3-Pin TO-252 TK65S04N1L
- RS Stock No.:
- 171-2494
- Mfr. Part No.:
- TK65S04N1L
- Manufacturer:
- Toshiba
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 10 units)*
HK$110.57
FREE delivery for orders over HK$250.00
In Stock
- Plus 2,820 unit(s) shipping from 26 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 490 | HK$11.057 | HK$110.57 |
| 500 - 990 | HK$10.781 | HK$107.81 |
| 1000 + | HK$10.614 | HK$106.14 |
*price indicative
- RS Stock No.:
- 171-2494
- Mfr. Part No.:
- TK65S04N1L
- Manufacturer:
- Toshiba
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 65A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 107W | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.5mm | |
| Height | 2.3mm | |
| Width | 7 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 65A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 107W | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 6.5mm | ||
Height 2.3mm | ||
Width 7 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
RoHS Status: Exempt
- COO (Country of Origin):
- JP
Applications
Automotive
Motor Drivers
Switching Voltage Regulators
Features
Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ
Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)
Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.3 mA)
Related links
- Toshiba Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212 SI7116BDN-T1-GE3
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212
- ROHM RD3G03BBG Type N-Channel MOSFET 40 V N TO-252 RD3G03BBGTL1
- ROHM RD3G03BBG Type N-Channel MOSFET 40 V N TO-252
- Toshiba Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- Toshiba Type N-Channel MOSFET 60 V Enhancement, 8-Pin TSON
- Toshiba Type N-Channel MOSFET 60 V EnhancementL1Q(M