Toshiba Type N-Channel MOSFET, 10 μA, 250 V Enhancement, 3-Pin TO-252 TK8P25DA,RQ(S
- RS Stock No.:
- 174-4116
- Mfr. Part No.:
- TK8P25DA,RQ(S
- Manufacturer:
- Toshiba
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 25 units)*
HK$68.80
FREE delivery for orders over HK$250.00
In Stock
- Plus 100 unit(s) shipping from 26 January 2026
- Plus 600 unit(s) shipping from 02 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | HK$2.752 | HK$68.80 |
| 50 - 100 | HK$2.684 | HK$67.10 |
| 125 - 225 | HK$2.616 | HK$65.40 |
| 250 - 600 | HK$2.552 | HK$63.80 |
| 625 + | HK$2.488 | HK$62.20 |
*price indicative
- RS Stock No.:
- 174-4116
- Mfr. Part No.:
- TK8P25DA,RQ(S
- Manufacturer:
- Toshiba
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10μA | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 500mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 55W | |
| Forward Voltage Vf | -1.7V | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.6mm | |
| Width | 6.1 mm | |
| Height | 2.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10μA | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 500mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 55W | ||
Forward Voltage Vf -1.7V | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.6mm | ||
Width 6.1 mm | ||
Height 2.3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Toshiba MOSFET is silicon N-channel MOS with 3 pin and surface mounting type.
Low drain-source on-resistance
Low leakage current
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