N-Channel MOSFET, 13.7 A, 650 V, 3-Pin D2PAK Toshiba TK14G65W,RQ(S

RS Stock No.:: 133-2797
Mfr. Part No.:: TK14G65W,RQ(S
Manufacturer:: Toshiba

N-Channel MOSFET, 13.7 A, 650 V, 3-Pin D2PAK Toshiba TK14G65W,RQ(S

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Price Each (In a Pack of 5)**

HK$20.008

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Units	Per unit	Per Pack**
5 - 20	HK$20.008	HK$100.04
25 - 45	HK$19.656	HK$98.28
50 - 245	HK$19.164	HK$95.82
250 - 495	HK$18.686	HK$93.43
500 +	HK$18.222	HK$91.11

**price indicative

RS Stock No.:: 133-2797
Mfr. Part No.:: TK14G65W,RQ(S
Manufacturer:: Toshiba

TK14G65W, MOSFET N-Channel 650V
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	13.7 A
Maximum Drain Source Voltage	650 V
Series	DTMOSIV
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	250 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	2.5V
Maximum Power Dissipation	130 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Width	8.8mm
Typical Gate Charge @ Vgs	35 nC @ 10 V
Length	10.35mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Height	4.46mm
Forward Diode Voltage	1.7V