Toshiba DTMOSIV Type N-Channel MOSFET, 13.7 A, 650 V Enhancement, 3-Pin TO-263 TK14G65W,RQ(S
- RS Stock No.:
- 133-2797
- Mfr. Part No.:
- TK14G65W,RQ(S
- Manufacturer:
- Toshiba
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Bulk discount available
Subtotal (1 pack of 5 units)*
HK$100.04
FREE delivery for orders over HK$250.00
In Stock
- 5 unit(s) ready to ship from another location
- Plus 855 unit(s) shipping from 29 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | HK$20.008 | HK$100.04 |
| 25 - 45 | HK$19.656 | HK$98.28 |
| 50 - 245 | HK$19.164 | HK$95.82 |
| 250 - 495 | HK$18.686 | HK$93.43 |
| 500 + | HK$18.222 | HK$91.11 |
*price indicative
- RS Stock No.:
- 133-2797
- Mfr. Part No.:
- TK14G65W,RQ(S
- Manufacturer:
- Toshiba
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13.7A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | DTMOSIV | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 250mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 130W | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Forward Voltage Vf | -1.7V | |
| Maximum Operating Temperature | 150°C | |
| Width | 8.8 mm | |
| Standards/Approvals | No | |
| Height | 4.46mm | |
| Length | 10.35mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13.7A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series DTMOSIV | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 250mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 130W | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Forward Voltage Vf -1.7V | ||
Maximum Operating Temperature 150°C | ||
Width 8.8 mm | ||
Standards/Approvals No | ||
Height 4.46mm | ||
Length 10.35mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET Transistors, Toshiba
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