Toshiba DTMOSIV Type N-Channel MOSFET, 27.6 A, 650 V Enhancement, 3-Pin TO-220 TK28E65W,S1X(S
- RS Stock No.:
- 125-0560
- Mfr. Part No.:
- TK28E65W,S1X(S
- Manufacturer:
- Toshiba
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 2 units)*
HK$120.80
FREE delivery for orders over HK$250.00
In Stock
- Plus 12 unit(s) shipping from 30 March 2026
- Plus 4 unit(s) shipping from 03 April 2026
- Plus 50 unit(s) shipping from 20 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | HK$60.40 | HK$120.80 |
| 10 - 18 | HK$59.35 | HK$118.70 |
| 20 - 48 | HK$58.25 | HK$116.50 |
| 50 - 98 | HK$57.20 | HK$114.40 |
| 100 + | HK$56.15 | HK$112.30 |
*price indicative
- RS Stock No.:
- 125-0560
- Mfr. Part No.:
- TK28E65W,S1X(S
- Manufacturer:
- Toshiba
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 27.6A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | DTMOSIV | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 110mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 230W | |
| Forward Voltage Vf | -1.7V | |
| Typical Gate Charge Qg @ Vgs | 75nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.16mm | |
| Height | 15.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 27.6A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series DTMOSIV | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 110mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 230W | ||
Forward Voltage Vf -1.7V | ||
Typical Gate Charge Qg @ Vgs 75nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.16mm | ||
Height 15.1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET N-Channel, TK2x Series, Toshiba
MOSFET Transistors, Toshiba
Related links
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS1X(S
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS1X(S
- Toshiba DTMOSIV Type N-Channel MOSFET 650 V EnhancementS5X(M
- Toshiba DTMOSIV Type N-Channel MOSFET 650 V EnhancementS5X(M
- Toshiba DTMOSIV Type N-Channel MOSFET 650 V EnhancementS1F(S
- Toshiba DTMOSIV Type N-Channel MOSFET 650 V EnhancementRQ(S
- Toshiba DTMOSIV Type N-Channel MOSFET 650 V EnhancementRQ(S
- Toshiba DTMOSIV Type N-Channel MOSFET 650 V EnhancementRQ(S