Toshiba DTMOSIV Type N-Channel MOSFET, 25 A, 600 V Enhancement, 3-Pin TO-220 TK25E60X,S1X(S
- RS Stock No.:
- 125-0555
- Mfr. Part No.:
- TK25E60X,S1X(S
- Manufacturer:
- Toshiba
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
HK$142.60
FREE delivery for orders over HK$250.00
In Stock
- Plus 5 unit(s) shipping from 30 March 2026
- Plus 5 unit(s) shipping from 06 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | HK$28.52 | HK$142.60 |
| 25 - 45 | HK$27.82 | HK$139.10 |
| 50 - 120 | HK$27.12 | HK$135.60 |
| 125 - 245 | HK$26.42 | HK$132.10 |
| 250 + | HK$25.76 | HK$128.80 |
*price indicative
- RS Stock No.:
- 125-0555
- Mfr. Part No.:
- TK25E60X,S1X(S
- Manufacturer:
- Toshiba
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | DTMOSIV | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.7V | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Maximum Power Dissipation Pd | 180W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.16mm | |
| Height | 15.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series DTMOSIV | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.7V | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Maximum Power Dissipation Pd 180W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.16mm | ||
Height 15.1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET N-Channel, TK2x Series, Toshiba
MOSFET Transistors, Toshiba
Related links
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS1X(S
- Toshiba DTMOSIV Type N-Channel MOSFET 650 V EnhancementS1X(S
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS5X(M
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS1VX(S
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS4VX(M
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS4VX(M
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS4VX(M