N-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 Infineon BSS806NEH6327XTSA1

RS Stock No.:: 165-5871
Mfr. Part No.:: BSS806NEH6327XTSA1
Manufacturer:: Infineon

N-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 Infineon BSS806NEH6327XTSA1

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Bulk discount available

Subtotal (1 reel of 3000 units)**

HK$1,968.00

9000 In stock for delivery within 3 working days*

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Units	Per unit	Per Reel**
3000 - 12000	HK$0.656	HK$1,968.00
15000 +	HK$0.59	HK$1,770.00

**price indicative

RS Stock No.:: 165-5871
Mfr. Part No.:: BSS806NEH6327XTSA1
Manufacturer:: Infineon

BSS806NE OptiMOS2 Small Signal Transistor Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	2.3 A
Maximum Drain Source Voltage	20 V
Package Type	SOT-23
Series	OptiMOS™ 2
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	82 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	0.75V
Minimum Gate Threshold Voltage	0.3V
Maximum Power Dissipation	500 mW
Transistor Configuration	Single
Maximum Gate Source Voltage	-8 V, +8 V
Width	1.3mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	1.7 nC @ 2.5 V
Length	2.9mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Height	1mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 Infineon BSS806NEH6327XTSA1

FREE delivery for orders over HK$850.00

Infineon OptiMOS™2 Power MOSFET Family

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