Infineon OptiMOS 2 Type N-Channel MOSFET, 2.3 A, 20 V Enhancement, 3-Pin SOT-23 BSS806NH6327XTSA1
- RS Stock No.:
- 165-5868
- Mfr. Part No.:
- BSS806NH6327XTSA1
- Manufacturer:
- Infineon
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Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 12000 | HK$0.667 | HK$2,001.00 |
| 15000 + | HK$0.601 | HK$1,803.00 |
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- RS Stock No.:
- 165-5868
- Mfr. Part No.:
- BSS806NH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.3A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | OptiMOS 2 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 82mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.82V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 1.7nC | |
| Maximum Power Dissipation Pd | 500mW | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 2.9mm | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.3A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series OptiMOS 2 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 82mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.82V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 1.7nC | ||
Maximum Power Dissipation Pd 500mW | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 2.9mm | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Infineon OptiMOS™ 2 Series MOSFET, 2.3A Maximum Continuous Drain Current, 500 mW Maximum Power Dissipation - BSS806NH6327XTSA1
This MOSFET is tailored for efficient power management in various electronic applications, supporting a maximum continuous drain current of 2.3A and a maximum drain source voltage of 20V. Its low resistance features help to minimise energy losses, making it suitable for applications that require a high level of confidence under stringent conditions.
Features & Benefits
• N-channel configuration enhances switching performance
• Enhancement mode reduces off-state leakage
• Ultra logic level compatibility suitable for 1.8V applications
• Integrated avalanche rating improves robustness under stress
• AEC-Q101 qualified for automotive applications ensures long-lasting performance
• Surface mount design enables straightforward integration into compact circuitry
Applications
• Ideal for power management in automotive electronics
• Utilised for driving low-voltage loads in automation systems
• Suitable for switching in power supplies
• Designed for high temperature operating environments
Can it be used in automotive applications?
Yes, it is AEC-Q101 qualified, ensuring its suitability for automotive environments.
What is the operating temperature range?
The operating temperature range is between -55°C and +150°C.
How does its RDS(on) value impact circuit performance?
A low RDS(on) value reduces power loss during operation, enhancing overall efficiency.
What is the significance of its gate threshold voltage?
The gate threshold voltage indicates when the MOSFET begins conducting, which is vital for controlling switch timing.
Infineon OptiMOS™2 Power MOSFET Family
Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon OptiMOS 2 Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Infineon OptiMOS 2 Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 BSS806NEH6327XTSA1
- Infineon OptiMOS 2 Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
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