N-Channel MOSFET, 1.4 A, 30 V, 3-Pin SOT-23 Infineon BSS316NH6327XTSA1
- RS Stock No.:
- 826-9412
- Mfr. Part No.:
- BSS316NH6327XTSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
View all MOSFETs
On back order for despatch 30/10/2023, delivery within 3 working days
Price Each (On a Reel of 250)
Was HK$2.239
You pay
HK$1.606
units | Per unit | Per Reel* |
250 - 500 | HK$1.606 | HK$401.50 |
750 - 1250 | HK$1.565 | HK$391.25 |
1500 + | HK$1.541 | HK$385.25 |
*price indicative |
- RS Stock No.:
- 826-9412
- Mfr. Part No.:
- BSS316NH6327XTSA1
- Manufacturer:
- Infineon
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Infineon OptiMOS™2 Power MOSFET Family
Infineons OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
Channel Type | N |
Maximum Continuous Drain Current | 1.4 A |
Maximum Drain Source Voltage | 30 V |
Package Type | SOT-23 |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 280 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2V |
Minimum Gate Threshold Voltage | 1.2V |
Maximum Power Dissipation | 500 mW |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Operating Temperature | +150 °C |
Length | 2.9mm |
Typical Gate Charge @ Vgs | 0.6 nC @ 5 V |
Number of Elements per Chip | 1 |
Transistor Material | Si |
Width | 1.3mm |
Height | 0.9mm |
Series | OptiMOS 2 |
Minimum Operating Temperature | -55 °C |