Toshiba Single U-MOSVIII-H 1 N-Channel MOSFET, 31 A, 30 V Enhancement, 8-Pin TSON TPN11003NL,LQ(S
- RS Stock No.:
- 133-2811
- Mfr. Part No.:
- TPN11003NL,LQ(S
- Manufacturer:
- Toshiba
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 20 units)*
HK$44.90
FREE delivery for orders over HK$250.00
Last RS stock
- Final 80 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | HK$2.245 | HK$44.90 |
| 100 - 180 | HK$2.19 | HK$43.80 |
| 200 - 980 | HK$2.135 | HK$42.70 |
| 1000 - 1980 | HK$2.085 | HK$41.70 |
| 2000 + | HK$2.025 | HK$40.50 |
*price indicative
- RS Stock No.:
- 133-2811
- Mfr. Part No.:
- TPN11003NL,LQ(S
- Manufacturer:
- Toshiba
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TSON | |
| Series | U-MOSVIII-H | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 16mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 19W | |
| Maximum Gate Source Voltage Vgs | -20, +20V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Height | 0.85mm | |
| Length | 3.1mm | |
| Width | 3.1mm | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TSON | ||
Series U-MOSVIII-H | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 16mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 19W | ||
Maximum Gate Source Voltage Vgs -20, +20V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Height 0.85mm | ||
Length 3.1mm | ||
Width 3.1mm | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- JP
MOSFET Transistors, Toshiba
Related links
- Toshiba U-MOSVIII-H Type N-Channel MOSFET 80 V EnhancementLQ(S
- Toshiba U-MOSVIII-H Type N-Channel MOSFET 30 V EnhancementLQ(S
- Toshiba U-MOSVIII-H Type N-Channel MOSFET 60 V EnhancementLQ(S
- Toshiba U-MOSVIII-H Type N-Channel MOSFET 30 V EnhancementLQ(S
- Toshiba U-MOSVIII-H Type N-Channel MOSFET 40 V EnhancementLQ(O
- Toshiba U-MOSVIII-H Type N-Channel MOSFET 80 V EnhancementS1X(S
- Toshiba U-MOSVIII-H Type N-Channel MOSFET 60 V EnhancementS1X(S
- Toshiba U-MOSVIII-H Type N-Channel MOSFET 80 V EnhancementS4X(S