Toshiba U-MOSVIII-H Type N-Channel MOSFET, 38 A, 30 V Enhancement, 8-Pin SOP TPH8R903NL,LQ(S
- RS Stock No.:
- 133-2810
- Mfr. Part No.:
- TPH8R903NL,LQ(S
- Manufacturer:
- Toshiba
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Bulk discount available
Subtotal (1 pack of 20 units)*
HK$51.20
FREE delivery for orders over HK$250.00
In Stock
- Plus 40 unit(s) shipping from 26 January 2026
- Plus 380 unit(s) shipping from 02 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | HK$2.56 | HK$51.20 |
| 100 - 180 | HK$2.483 | HK$49.66 |
| 200 - 980 | HK$2.422 | HK$48.44 |
| 1000 - 1980 | HK$2.365 | HK$47.30 |
| 2000 + | HK$2.313 | HK$46.26 |
*price indicative
- RS Stock No.:
- 133-2810
- Mfr. Part No.:
- TPH8R903NL,LQ(S
- Manufacturer:
- Toshiba
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 38A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOP | |
| Series | U-MOSVIII-H | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 12.7mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 24W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 9.8nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.95mm | |
| Width | 5 mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 38A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOP | ||
Series U-MOSVIII-H | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 12.7mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 24W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 9.8nC | ||
Maximum Operating Temperature 150°C | ||
Height 0.95mm | ||
Width 5 mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET Transistors, Toshiba
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