N-Channel MOSFET, 263 A, 60 V, 3-Pin TO-220 Toshiba TK100E06N1,S1X(S

RS Stock No.:: 125-0528
Mfr. Part No.:: TK100E06N1,S1X(S
Manufacturer:: Toshiba

N-Channel MOSFET, 263 A, 60 V, 3-Pin TO-220 Toshiba TK100E06N1,S1X(S

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Price Each (In a Pack of 5)**

HK$14.82

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Units	Per unit	Per Pack**
5 - 20	HK$14.82	HK$74.10
25 - 45	HK$14.46	HK$72.30
50 - 120	HK$14.08	HK$70.40
125 - 245	HK$13.74	HK$68.70
250 +	HK$13.40	HK$67.00

**price indicative

RS Stock No.:: 125-0528
Mfr. Part No.:: TK100E06N1,S1X(S
Manufacturer:: Toshiba

TK100E06N1,S1X(S
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	263 A
Maximum Drain Source Voltage	60 V
Package Type	TO-220
Series	U-MOSVIII-H
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	2.3 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	255 W
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Width	4.45mm
Length	10.16mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Typical Gate Charge @ Vgs	140 nC @ 10 V
Height	15.1mm
Forward Diode Voltage	1.2V