Infineon OptiMOS 5 N-Channel MOSFET, 789 A, 25 V, 9-Pin PG-WHTFN-9 IQDH29NE2LM5CGSCATMA1

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HK$77.06

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Units
Per unit
Per Pack*
2 - 18HK$38.53HK$77.06
20 - 198HK$34.71HK$69.42
200 - 998HK$32.00HK$64.00
1000 - 1998HK$29.675HK$59.35
2000 +HK$26.575HK$53.15

*price indicative

RS Stock No.:
348-874
Mfr. Part No.:
IQDH29NE2LM5CGSCATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

789 A

Maximum Drain Source Voltage

25 V

Series

OptiMOS 5

Package Type

PG-WHTFN-9

Mounting Type

Surface Mount

Pin Count

9

Channel Mode

Enhancement

Number of Elements per Chip

1

COO (Country of Origin):
MY
The Infineon Power MOSFET comes with industry’s lowest RDS(on) of 0.29 mOhm combined with outstanding thermal performance for easy power loss management. The Centre-Gate footprint is optimized for parallelization.

Minimized conduction losses
Fast switching
Reduced voltage overshoot

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