Infineon OptiMOS 5 Type N-Channel MOSFET, 789 A, 25 V Enhancement, 8-Pin PG-WHSON-8 IQDH29NE2LM5SCATMA1

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Subtotal (1 pack of 2 units)*

HK$77.10

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Units
Per unit
Per Pack*
2 - 18HK$38.55HK$77.10
20 - 198HK$34.75HK$69.50
200 - 998HK$32.00HK$64.00
1000 - 1998HK$29.70HK$59.40
2000 +HK$26.60HK$53.20

*price indicative

RS Stock No.:
348-884
Mfr. Part No.:
IQDH29NE2LM5SCATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

789A

Maximum Drain Source Voltage Vds

25V

Series

OptiMOS 5

Package Type

PG-WHSON-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.29mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

278W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

COO (Country of Origin):
AT
The Infineon Power MOSFET comes with industry’s lowest RDS(ON) of 0.29 mOhm combined with outstanding thermal performance for easy power loss management.

Minimized conduction losses

Fast switching

Reduced voltage overshoot

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