Infineon OptiMOS 5 N-Channel MOSFET, 445 A, 60 V, 9-Pin PG-WHTFN-9 IQD009N06NM5CGSCATMA1

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HK$94.89

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Units
Per unit
Per Pack*
2 - 18HK$47.445HK$94.89
20 - 198HK$42.74HK$85.48
200 - 998HK$39.42HK$78.84
1000 - 1998HK$36.54HK$73.08
2000 +HK$32.775HK$65.55

*price indicative

RS Stock No.:
348-880
Mfr. Part No.:
IQD009N06NM5CGSCATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

445 A

Maximum Drain Source Voltage

60 V

Package Type

PG-WHTFN-9

Series

OptiMOS 5

Mounting Type

Surface Mount

Pin Count

9

Channel Mode

Enhancement

Number of Elements per Chip

1

COO (Country of Origin):
MY
The Infineon Power MOSFET comes with a low RDS(on) of 0.9 mOhm combined with outstanding thermal performance for easy power loss management. The Centre-Gate footprint is optimized for parallelization.

Minimized conduction losses
Fast switching
Reduced voltage overshoot

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