onsemi IGBT Module 1000 V Q2BOOST - Case 180BG, Surface

The image is for reference only, please refer to product details and specifications

Bulk discount available
View bulk pricing option

Subtotal (1 tray of 36 units)*

HK$49,701.096

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later

Units
Per unit
Per Tray*
36 - 36HK$1,380.586HK$49,701.10
72 - 72HK$1,352.975HK$48,707.10
108 +HK$1,325.914HK$47,732.90

*price indicative

RS Stock No.:
245-6985
Mfr. Part No.:
NXH450B100H4Q2F2PG
Manufacturer:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1000V

Number of Transistors

2

Maximum Power Dissipation Pd

79W

Package Type

Q2BOOST - Case 180BG

Mount Type

Surface

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Length

93.1mm

Height

12.3mm

Standards/Approvals

RoHS

Series

NXH450B100H4Q2F2PG

Automotive Standard

No

The ON Semiconductor Q2BOOST Module is a Si or SiC Hybrid three channel symmetric boost module. Each channel contains two 1000 V, 150 A IGBTs, two 1200 V, 30 A SiC diodes and two 1600 V, 30 A bypass diodes. The module contains an NTC thermistor.

Silicon or SiC Hybrid technology maximizes power density

Low switching loss reduces system power dissipation

Low inductive layout

Press fit and solder pin options

This Device is Pb free, Halogen Free and is RoHS Compliant

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy