onsemi IGBT Module 1000 V Q2PACK, Surface
- RS Stock No.:
- 245-6973
- Mfr. Part No.:
- NXH350N100H4Q2F2P1G
- Manufacturer:
- onsemi
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Bulk discount available
Subtotal (1 tray of 36 units)*
HK$55,945.296
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 23 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tray* |
|---|---|---|
| 36 - 36 | HK$1,554.036 | HK$55,945.30 |
| 72 - 72 | HK$1,522.956 | HK$54,826.42 |
| 108 + | HK$1,492.497 | HK$53,729.89 |
*price indicative
- RS Stock No.:
- 245-6973
- Mfr. Part No.:
- NXH350N100H4Q2F2P1G
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1000V | |
| Maximum Power Dissipation Pd | 592W | |
| Number of Transistors | 4 | |
| Package Type | Q2PACK | |
| Mount Type | Surface | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 12.3mm | |
| Length | 93.1mm | |
| Standards/Approvals | RoHS | |
| Series | NXH350N100H4Q2F2P1G | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1000V | ||
Maximum Power Dissipation Pd 592W | ||
Number of Transistors 4 | ||
Package Type Q2PACK | ||
Mount Type Surface | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Height 12.3mm | ||
Length 93.1mm | ||
Standards/Approvals RoHS | ||
Series NXH350N100H4Q2F2P1G | ||
Automotive Standard No | ||
Si/SiC Hybrid Module - EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package Press-fit pins
The ON Semiconductor Three Level NPC Q2Pack Module is a high density, integrated power module combines high performance IGBTs with rugged anti parallel diodes.
Extremely efficient trench with field stop technology
Low switching loss reduces system power dissipation
Module design offers high power density
Low inductive layout
Low package height
These devices are Pb free, Halogen Free and are RoHS Compliant
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