onsemi NXH300B100H4Q2F2SG IGBT Module, 73 A 1000 V 93x47 (SOLDER PIN) (Pb-Free and Halide-Free Solder Pins), Q2BOOST -
- RS Stock No.:
- 245-6971
- Mfr. Part No.:
- NXH300B100H4Q2F2SG
- Manufacturer:
- onsemi
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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 245-6971
- Mfr. Part No.:
- NXH300B100H4Q2F2SG
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Maximum Continuous Collector Current | 73 A | |
| Maximum Collector Emitter Voltage | 1000 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 79 W | |
| Number of Transistors | 6 | |
| Package Type | 93x47 (SOLDER PIN) (Pb-Free and Halide-Free Solder Pins), Q2BOOST - PIM53 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current 73 A | ||
Maximum Collector Emitter Voltage 1000 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 79 W | ||
Number of Transistors 6 | ||
Package Type 93x47 (SOLDER PIN) (Pb-Free and Halide-Free Solder Pins), Q2BOOST - PIM53 | ||
The ON Semiconductor Q2BOOST Module is a high−density, integrated power module combines high performance IGBTs with 1200 V SiC diode.
Extremely Efficient Trench with Field Stop Technology
Low Switching loss reduces system power dissipation
Module design offers high power density
Low inductive layout
3 channel in Q2BOOST package
These are Pb free devices
Low Switching loss reduces system power dissipation
Module design offers high power density
Low inductive layout
3 channel in Q2BOOST package
These are Pb free devices
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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