onsemi NXH450B100H4Q2F2SG IGBT Module 1000 V Q2BOOST - Case 180BR, Surface

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HK$1,377.60

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Per unit
1 - 1HK$1,377.60
2 - 3HK$1,350.10
4 - 7HK$1,323.10
8 +HK$1,296.60

*price indicative

Packaging Options:
RS Stock No.:
245-6989
Mfr. Part No.:
NXH450B100H4Q2F2SG
Manufacturer:
onsemi
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Brand

onsemi

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1000V

Maximum Power Dissipation Pd

79W

Number of Transistors

2

Package Type

Q2BOOST - Case 180BR

Mount Type

Surface

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Height

12.3mm

Length

93.1mm

Series

NXH450B100H4Q2F2SG

Automotive Standard

No

The ON Semiconductor Q2BOOST Module is a Si or SiC Hybrid three channel symmetric boost module. Each channel contains two 1000 V, 150 A IGBTs, two 1200 V, 30 A SiC diodes and two 1600 V, 30 A bypass diodes. The module contains an NTC thermistor.

Silicon or SiC Hybrid technology maximizes power density

Low switching loss reduces system power dissipation

Low inductive layout

Press fit and solder pin options

This Device is Pb free, Halogen Free and is RoHS Compliant

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