Infineon FP15R12W1T4BOMA1 IGBT Module 1200 V

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Subtotal (1 unit)*

HK$317.80

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Units
Per unit
1 - 1HK$317.80
2 - 2HK$311.40
3 - 3HK$305.10
4 - 4HK$299.10
5 +HK$293.00

*price indicative

Packaging Options:
RS Stock No.:
244-5387
Mfr. Part No.:
FP15R12W1T4BOMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Number of Transistors

7

Maximum Power Dissipation Pd

130W

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.25V

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

150°C

Series

FP15R12W1T4B

Length

62.8mm

Width

33.8 mm

Height

12mm

Standards/Approvals

RoHS

Automotive Standard

No

The infineon IGBT module is suitable for auxiliary inverters, motor drives and air conditioning etc.

Electrical features

Low switching losses, low inductive design

Trench IGBT 3

VCEsat with positive temperature coefficient

Low VCEsat

Mechanical features

Al2O3 substrate with low thermal resistance

Compact design

Solder contact technology

Rugged mounting due to integrated mounting clamps

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