Infineon IGBT Module 1200 V

The image is for reference only, please refer to product details and specifications

Bulk discount available

Subtotal (1 tray of 24 units)*

HK$6,222.696

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 04 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
Per Tray*
24 - 24HK$259.279HK$6,222.70
48 - 48HK$254.092HK$6,098.21
72 +HK$249.017HK$5,976.41

*price indicative

RS Stock No.:
244-5385
Mfr. Part No.:
FP15R12W1T4BOMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Number of Transistors

7

Maximum Power Dissipation Pd

130W

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.25V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Height

12mm

Width

33.8 mm

Length

62.8mm

Standards/Approvals

RoHS

Series

FP15R12W1T4B

Automotive Standard

No

The infineon IGBT module is suitable for auxiliary inverters, motor drives and air conditioning etc.

Electrical features

Low switching losses, low inductive design

Trench IGBT 3

VCEsat with positive temperature coefficient

Low VCEsat

Mechanical features

Al2O3 substrate with low thermal resistance

Compact design

Solder contact technology

Rugged mounting due to integrated mounting clamps

Related links