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Infineon FP25R12W2T4BOMA1 IGBT Module, 39 A 1200 V

RS Stock No.:: 244-5394
Mfr. Part No.:: FP25R12W2T4BOMA1
Manufacturer:: Infineon

Infineon FP25R12W2T4BOMA1 IGBT Module, 39 A 1200 V

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Subtotal (1 unit)*

HK$382.70

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Orders below HK$250.00 (exc. GST) cost HK$50.00.

Temporarily out of stock

Shipping from 03 June 2026

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Units	Per unit
1 - 1	HK$382.70
2 - 2	HK$375.10
3 - 3	HK$367.60
4 - 4	HK$360.20
5 +	HK$353.00

*price indicative

RS Stock No.:: 244-5394
Mfr. Part No.:: FP25R12W2T4BOMA1
Manufacturer:: Infineon

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Maximum Continuous Collector Current	39 A
	Maximum Collector Emitter Voltage	1200 V
	Maximum Gate Emitter Voltage	+/-20V
	Maximum Power Dissipation	175 W
	Number of Transistors	7

	Select all
	Brand Infineon
	Maximum Continuous Collector Current 39 A
	Maximum Collector Emitter Voltage 1200 V
	Maximum Gate Emitter Voltage +/-20V
	Maximum Power Dissipation 175 W
	Number of Transistors 7

Datasheet - FP25R12W2T4BOMA1

The infineon IGBT module the maximum rated repetitive peak collector current is 50 A and maximum collector-emitter saturation voltag 2.25 V, gate threshold voltage is 6.4 V.

Collector-emitter cut-off current 1.0 mA
Temperature under switching conditions 150° C
Gate-emitter leakage current 400 nA
Reverse transfer capacitance 0.05 nF

Infineon FP25R12W2T4BOMA1 IGBT Module, 39 A 1200 V

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