Infineon FP100R12KT4B11BOSA1 IGBT Module 1200 V

Name: Infineon FP100R12KT4B11BOSA1 IGBT Module 1200 V
Brand: Infineon
SKU: 244-5377
Price: 1020.50 HKD
Availability: InStock

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Subtotal (1 unit)*

HK$1,020.50

In Stock

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Units	Per unit
1 - 1	HK$1,020.50
2 +	HK$1,000.00

*price indicative

Select all	Attribute	Value
	Brand	Infineon
	Product Type	IGBT Module
	Maximum Collector Emitter Voltage Vceo	1200V
	Number of Transistors	7
	Maximum Power Dissipation Pd	515W
	Minimum Operating Temperature	-40°C
	Maximum Collector Emitter Saturation Voltage VceSAT	2.1V
	Maximum Gate Emitter Voltage VGEO	20 V
	Maximum Operating Temperature	150°C
	Series	FP100R12KT4B11
	Height	17mm
	Length	122mm
	Width	62 mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type IGBT Module
	Maximum Collector Emitter Voltage Vceo 1200V
	Number of Transistors 7
	Maximum Power Dissipation Pd 515W
	Minimum Operating Temperature -40°C
	Maximum Collector Emitter Saturation Voltage VceSAT 2.1V
	Maximum Gate Emitter Voltage VGEO 20 V
	Maximum Operating Temperature 150°C
	Series FP100R12KT4B11
	Height 17mm
	Length 122mm
	Width 62 mm
	Standards/Approvals RoHS
	Automotive Standard No

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