Infineon IHW30N65R6XKSA1, Type N-Channel Reverse Conducting IGBT, 65 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 225-0572
- Mfr. Part No.:
- IHW30N65R6XKSA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 5 units)*
HK$119.90
FREE delivery for orders over HK$250.00
In Stock
- 135 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | HK$23.98 | HK$119.90 |
| 10 - 95 | HK$23.54 | HK$117.70 |
| 100 - 245 | HK$23.14 | HK$115.70 |
| 250 - 495 | HK$22.70 | HK$113.50 |
| 500 + | HK$22.30 | HK$111.50 |
*price indicative
- RS Stock No.:
- 225-0572
- Mfr. Part No.:
- IHW30N65R6XKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 65A | |
| Product Type | Reverse Conducting IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 160W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Series | IHW30N65R6 | |
| Standards/Approvals | JEDEC47/20/22 | |
| Height | 5.3mm | |
| Length | 41.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 65A | ||
Product Type Reverse Conducting IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 160W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Series IHW30N65R6 | ||
Standards/Approvals JEDEC47/20/22 | ||
Height 5.3mm | ||
Length 41.9mm | ||
Automotive Standard No | ||
The Infineon IHW30N65R6 is the 650 V, 30 A IGBT with monolithically integrated diode in TO-247 package with monolithically integrated diode is designed to fulfil demanding requirements of induction heating applications using half-bridge resonant topology.
High ruggedness and stable temperature behaviour
Low EMI
Pb-free lead plating, RoHS compliant
Powerful monolithic reverse-conducting diode with low forward voltage
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