Infineon IHW40N135R5XKSA1, Type N-Channel Reverse Conducting IGBT, 80 A 1350 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 215-6643
- Mfr. Part No.:
- IHW40N135R5XKSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 2 units)*
HK$74.10
FREE delivery for orders over HK$250.00
In Stock
- 2 unit(s) ready to ship from another location
- Plus 192 unit(s) shipping from 07 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | HK$37.05 | HK$74.10 |
| 10 - 98 | HK$36.10 | HK$72.20 |
| 100 - 248 | HK$35.25 | HK$70.50 |
| 250 - 498 | HK$34.30 | HK$68.60 |
| 500 + | HK$33.50 | HK$67.00 |
*price indicative
- RS Stock No.:
- 215-6643
- Mfr. Part No.:
- IHW40N135R5XKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Reverse Conducting IGBT | |
| Maximum Continuous Collector Current Ic | 80A | |
| Maximum Collector Emitter Voltage Vceo | 1350V | |
| Maximum Power Dissipation Pd | 394W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±25 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JESD-022, RoHS | |
| Series | Resonant Switching | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Reverse Conducting IGBT | ||
Maximum Continuous Collector Current Ic 80A | ||
Maximum Collector Emitter Voltage Vceo 1350V | ||
Maximum Power Dissipation Pd 394W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±25 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JESD-022, RoHS | ||
Series Resonant Switching | ||
Automotive Standard No | ||
The Infineon insulated-gate bipolar transistor of resonant switching series with low saturation voltage.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
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