Infineon IHW50N65R5XKSA1 IGBT, 80 A 650 V, 3-Pin PG-TO247-3

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Subtotal (1 tube of 30 units)*

HK$557.49

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Units
Per unit
Per Tube*
30 - 60HK$18.583HK$557.49
90 - 120HK$17.84HK$535.20
150 +HK$17.38HK$521.40

*price indicative

RS Stock No.:
215-6645
Mfr. Part No.:
IHW50N65R5XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

282 W

Package Type

PG-TO247-3

Pin Count

3

The Infineon reverse conducting insulated-gate bipolar transistor with monolithic body diode.

High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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