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Discrete Semiconductors

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Discrete Semiconductors
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New
  • HK$116.936
    Each (In a Tube of 30)
N-Channel MOSFET, 47 A, 650 V TO247-4L ON Semiconductor NTH4L060N065SC1
  • Channel TypeN
  • Maximum Continuous Drain Current47 A
  • Maximum Drain Source Voltage650 V
  • Package TypeTO247-4L
  • Mounting TypeThrough Hole
See similar products in MOSFETs
New
  • HK$1,379.125
    Each (In a Tray of 36)
ON Semiconductor NXH300B100H4Q2F2PG IGBT Module, 73 A 1000 V 93x47 (PRESSFIT) (Pb-Free and Halide-Free Press Fit Pins),
  • Maximum Continuous Collector Current73 A
  • Maximum Collector Emitter Voltage1000 V
  • Maximum Gate Emitter Voltage±20V
  • Maximum Power Dissipation79 W
  • Number of Transistors6
See similar products in IGBTs
New
  • HK$1,315.26Each
SiC Power Module, 114 A, 1200 V F1-2PACK ON Semiconductor NXH010P120MNF1PTG
  • Maximum Continuous Drain Current114 A
  • Maximum Drain Source Voltage1200 V
  • Package TypeF1-2PACK
  • Mounting TypeThrough Hole
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New
  • HK$1,404.223
    Each (In a Tray of 36)
ON Semiconductor NXH300B100H4Q2F2SG IGBT Module, 73 A 1000 V 93x47 (SOLDER PIN) (Pb-Free and Halide-Free Solder Pins),
  • Maximum Continuous Collector Current73 A
  • Maximum Collector Emitter Voltage1000 V
  • Maximum Gate Emitter Voltage±20V
  • Number of Transistors6
  • Maximum Power Dissipation79 W
See similar products in IGBTs
New
  • HK$1,188.381
    Each (In a Tray of 21)
ON Semiconductor NXH40B120MNQ1SNG IGBT Module Q1 3-Channel BOOST - Case 180BQ Solder Pins (Pb Free)
  • Maximum Power Dissipation156 W
  • Number of Transistors3
  • Package TypeQ1 3-Channel BOOST - Case 180BQ Solder Pins (Pb Free)
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New
  • HK$33.73
    Each (In a Pack of 2)
N-Channel MOSFET, 175 A, 100 V DFN5 ON Semiconductor NTMFS002N10MCLT1G
  • Channel TypeN
  • Maximum Continuous Drain Current175 A
  • Maximum Drain Source Voltage100 V
  • Package TypeDFN5
  • Mounting TypeSMD
See similar products in MOSFETs
New
  • HK$159.70Each
N-Channel MOSFET, 47 A, 650 V TO247-4L ON Semiconductor NTH4L060N065SC1
  • Channel TypeN
  • Maximum Continuous Drain Current47 A
  • Maximum Drain Source Voltage650 V
  • Package TypeTO247-4L
  • Mounting TypeThrough Hole
See similar products in MOSFETs
New
  • HK$1,579.91Each
ON Semiconductor NXH400N100H4Q2F2SG IGBT Module, 409 A 1000 V 93x47 (SOLDER PIN) (Pb-Free/Halide-Free), PIM44
  • Maximum Continuous Collector Current409 A
  • Maximum Collector Emitter Voltage1000 V
  • Maximum Gate Emitter Voltage±20V
  • Maximum Power Dissipation959 W
  • Number of Transistors4
See similar products in IGBTs
New
  • HK$1,266.18Each
ON Semiconductor NXH020F120MNF1PTG IGBT Module F1-4PACK Press-fit Pins with pre-applied thermal interface material
  • Number of Transistors4
  • Maximum Power Dissipation119 W
  • Package TypeF1-4PACK Press-fit Pins with pre-applied thermal interface material (TIM) (Pb-Free and Halide-Free)
See similar products in IGBTs
New
  • HK$485.52Each
ON Semiconductor NXH80T120L3Q0S3G IGBT Module, 75 A 1200 V Q0PACK - Case 180AB (Pb-Free and Halide-Free)
  • Maximum Continuous Collector Current75 A
  • Maximum Collector Emitter Voltage1200 V
  • Maximum Gate Emitter Voltage±20V
  • Number of Transistors4
  • Maximum Power Dissipation188 W
See similar products in IGBTs
New
  • HK$551.525
    Each (In a Tray of 24)
ON Semiconductor NXH80B120MNQ0SNG IGBT Module Q0BOOST - Case 180AJ (Pb-Free and Halide-Free Solder Pins)
  • Maximum Power Dissipation69 W
  • Number of Transistors2
  • Package TypeQ0BOOST - Case 180AJ (Pb-Free and Halide-Free Solder Pins)
See similar products in IGBTs
New
  • HK$1,567.359
    Each (In a Tray of 36)
ON Semiconductor NXH400N100H4Q2F2PG IGBT Module, 409 A 1000 V 93x47 (PRESSFIT) (Pb-Free/Halide-Free), PIM42
  • Maximum Continuous Collector Current409 A
  • Maximum Collector Emitter Voltage1000 V
  • Maximum Gate Emitter Voltage±20V
  • Maximum Power Dissipation959 W
  • Number of Transistors4
See similar products in IGBTs
New
  • HK$11.111
    Each (On a Reel of 1500)
N-Channel MOSFET, 20 A, 60 V DFN ON Semiconductor NTMFS5C645NT1G
  • Channel TypeN
  • Maximum Continuous Drain Current20 A
  • Maximum Drain Source Voltage60 V
  • Package TypeDFN
  • Mounting TypeSurface
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New
  • HK$955.22Each
New
  • HK$7.416
    Each (On a Reel of 1500)
N-Channel MOSFET, 9.2 A, 100 V WDFN ON Semiconductor NTTFS012N10MDTAG
  • Channel TypeN
  • Maximum Continuous Drain Current9.2 A
  • Maximum Drain Source Voltage100 V
  • Package TypeWDFN
  • Mounting TypeSMD
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New
  • HK$1,203.44
    Each (In a Tray of 36)
ON Semiconductor NXH450B100H4Q2F2SG IGBT Module, 101 A 1000 V Q2BOOST - Case 180BR (Pb-Free and Halide-Free Solder Pins)
  • Maximum Continuous Collector Current101 A
  • Maximum Collector Emitter Voltage1000 V
  • Maximum Gate Emitter Voltage±20V
  • Number of Transistors2
  • Maximum Power Dissipation79 W
See similar products in IGBTs
New
  • HK$1,391.67Each
ON Semiconductor NXH300B100H4Q2F2PG IGBT Module, 73 A 1000 V 93x47 (PRESSFIT) (Pb-Free and Halide-Free Press Fit Pins),
  • Maximum Continuous Collector Current73 A
  • Maximum Collector Emitter Voltage1000 V
  • Maximum Gate Emitter Voltage±20V
  • Number of Transistors6
  • Maximum Power Dissipation79 W
See similar products in IGBTs
New
  • HK$31.25Each
N-Channel MOSFET, 142 A, 100 V DFN5 5x6 ON Semiconductor NTMFS3D2N10MDT1G
  • Channel TypeN
  • Maximum Continuous Drain Current142 A
  • Maximum Drain Source Voltage100 V
  • Package TypeDFN5 5x6
  • Mounting TypeSMD
See similar products in MOSFETs
New
  • HK$605.74Each
ON Semiconductor NXH80B120MNQ0SNG IGBT Module Q0BOOST - Case 180AJ (Pb-Free and Halide-Free Solder Pins)
  • Number of Transistors2
  • Maximum Power Dissipation69 W
  • Package TypeQ0BOOST - Case 180AJ (Pb-Free and Halide-Free Solder Pins)
See similar products in IGBTs
  • HK$0.18
    Each (On a Reel of 3000)
onsemi, 22V Zener Diode 5% 300 mW SMT 3-Pin SOT-23
  • Diode ConfigurationSingle
  • Nominal Zener Voltage22V
  • Mounting TypeSurface Mount
  • Number of Elements per Chip1
  • Maximum Power Dissipation300 mW
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