Infineon SRAM- 4 MB
- RS Stock No.:
- 188-5324
- Mfr. Part No.:
- CY62148ELL-55SXI
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 tube of 25 units)*
HK$1,623.00
FREE delivery for orders over HK$250.00
Last RS stock
- Final 100 unit(s), ready to ship from another location
Units | Per unit | Per Tube* |
|---|---|---|
| 25 - 25 | HK$64.92 | HK$1,623.00 |
| 50 - 75 | HK$63.62 | HK$1,590.50 |
| 100 + | HK$62.348 | HK$1,558.70 |
*price indicative
- RS Stock No.:
- 188-5324
- Mfr. Part No.:
- CY62148ELL-55SXI
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | SRAM | |
| Memory Size | 4MB | |
| Number of Words | 512K | |
| Number of Bits per Word | 8 | |
| Maximum Random Access Time | 45ns | |
| Address Bus Width | 8bit | |
| Maximum Clock Frequency | 1MHz | |
| Minimum Supply Voltage | 4.5V | |
| Timing Type | Asynchronous | |
| Mount Type | Surface | |
| Maximum Supply Voltage | 5.5V | |
| Minimum Operating Temperature | -40°C | |
| Package Type | SOIC | |
| Pin Count | 32 | |
| Maximum Operating Temperature | 85°C | |
| Standards/Approvals | No | |
| Series | CY62148E | |
| Height | 2.81mm | |
| Length | 20.75mm | |
| Supply Current | 20mA | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type SRAM | ||
Memory Size 4MB | ||
Number of Words 512K | ||
Number of Bits per Word 8 | ||
Maximum Random Access Time 45ns | ||
Address Bus Width 8bit | ||
Maximum Clock Frequency 1MHz | ||
Minimum Supply Voltage 4.5V | ||
Timing Type Asynchronous | ||
Mount Type Surface | ||
Maximum Supply Voltage 5.5V | ||
Minimum Operating Temperature -40°C | ||
Package Type SOIC | ||
Pin Count 32 | ||
Maximum Operating Temperature 85°C | ||
Standards/Approvals No | ||
Series CY62148E | ||
Height 2.81mm | ||
Length 20.75mm | ||
Supply Current 20mA | ||
Automotive Standard No | ||
- COO (Country of Origin):
- US
Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor
The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.