Winbond SDRAM 256 MB Surface, 54-Pin 16 bit TSOP

Name: Winbond SDRAM 256 MB Surface, 54-Pin 16 bit TSOP
Brand: Winbond
SKU: 188-2632P
Price: 21.34 HKD
Availability: BackOrder

The image is for reference only, please refer to product details and specifications

Bulk discount available

Subtotal 30 units (supplied in a tray)*

HK$640.20

Temporarily out of stock

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit
30 - 50	HK$21.34
55 +	HK$20.92

*price indicative

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Winbond
	Memory Size	256MB
	Product Type	SDRAM
	Organisation	32M x 8 Bit
	Data Bus Width	16bit
	Address Bus Width	15bit
	Maximum Clock Frequency	200MHz
	Number of Bits per Word	8
	Maximum Random Access Time	5ns
	Number of Words	32M
	Mount Type	Surface
	Package Type	TSOP
	Minimum Operating Temperature	-40°C
	Pin Count	54
	Maximum Operating Temperature	85°C
	Standards/Approvals	RoHS
	Length	22.35mm
	Series	W9825G6KH
	Width	10.29 mm
	Height	1.05mm
	Maximum Supply Voltage	3.6V
	Minimum Supply Voltage	3V
	Automotive Standard	No
	Supply Current	5mA

	Select all
	Brand Winbond
	Memory Size 256MB
	Product Type SDRAM
	Organisation 32M x 8 Bit
	Data Bus Width 16bit
	Address Bus Width 15bit
	Maximum Clock Frequency 200MHz
	Number of Bits per Word 8
	Maximum Random Access Time 5ns
	Number of Words 32M
	Mount Type Surface
	Package Type TSOP
	Minimum Operating Temperature -40°C
	Pin Count 54
	Maximum Operating Temperature 85°C
	Standards/Approvals RoHS
	Length 22.35mm
	Series W9825G6KH
	Width 10.29 mm
	Height 1.05mm
	Maximum Supply Voltage 3.6V
	Minimum Supply Voltage 3V
	Automotive Standard No
	Supply Current 5mA

The W9825G6KH is a 256M SDRAM and speed involving -5/-5I/-6/-6I/-6J/-6L/-6A/-6K/-75/75J/75L.

3.3V ± 0.3V Power Supply

Up to 200 MHz Clock Frequency

4,194,304 Words x 4 Banks x 16 Bits Organization

Self Refresh Mode: Standard and Low Power

CAS Latency: 2 and 3

Burst Length: 1, 2, 4, 8 and Full Page

Burst Read, Single Writes Mode

Byte Data Controlled by LDQM, UDQM

Power Down Mode

Auto-precharge and Controlled Precharge

8K Refresh Cycles/64 mS, @ -40 °C≦ TA / TCASE ≦ 85°C

8K Refresh Cycles/16 mS, @ 85 °C < TA / TCASE ≦ 105°C

Interface: LVTTL

Not support self refresh function with TA / TCASE > 85°C

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