STMicroelectronics 650 V 10 A Diode 3-Pin D2PAK
- RS Stock No.:
- 229-2096P
- Mfr. Part No.:
- STPSC10H065G2-TR
- Manufacturer:
- STMicroelectronics
The image is for reference only, please refer to product details and specifications
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 229-2096P
- Mfr. Part No.:
- STPSC10H065G2-TR
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 470A | |
| Maximum Forward Voltage Vf | 1.95V | |
| Peak Reverse Current Ir | 85μA | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.3mm | |
| Standards/Approvals | RoHS | |
| Height | 4.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 470A | ||
Maximum Forward Voltage Vf 1.95V | ||
Peak Reverse Current Ir 85μA | ||
Maximum Operating Temperature 175°C | ||
Length 15.3mm | ||
Standards/Approvals RoHS | ||
Height 4.3mm | ||
Automotive Standard No | ||
The STMicroelectronics STPSC10H065 is the 10 A, 650 V SiC diode is an ultrahigh performance power schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a schottky diode structure with a 650 V rating.
No reverse recovery charge in application current range
Switching behaviour independent of temperature
High forward surge capability
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