STMicroelectronics 1.2 kV 15 A Diode 2-Pin DPAK HV
- RS Stock No.:
- 219-4239P
- Mfr. Part No.:
- STPSC15H12G2Y-TR
- Manufacturer:
- STMicroelectronics
The image is for reference only, please refer to product details and specifications
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 219-4239P
- Mfr. Part No.:
- STPSC15H12G2Y-TR
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Diode | |
| Mount Type | Surface | |
| Package Type | DPAK HV | |
| Maximum Continuous Forward Current If | 15A | |
| Peak Reverse Repetitive Voltage Vrrm | 1.2kV | |
| Series | STPSC15H12G2Y-TR | |
| Diode Configuration | Single | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 2.25V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 90A | |
| Minimum Operating Temperature | -40°C | |
| Peak Reverse Current Ir | 45μA | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 10.58mm | |
| Height | 4.3mm | |
| Length | 15.95mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Diode | ||
Mount Type Surface | ||
Package Type DPAK HV | ||
Maximum Continuous Forward Current If 15A | ||
Peak Reverse Repetitive Voltage Vrrm 1.2kV | ||
Series STPSC15H12G2Y-TR | ||
Diode Configuration Single | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 2.25V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 90A | ||
Minimum Operating Temperature -40°C | ||
Peak Reverse Current Ir 45μA | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 10.58mm | ||
Height 4.3mm | ||
Length 15.95mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics 15 A, 1200 V Sic diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature. Housed in D2PAK HV, this diode is perfectly suited for a usage in PFC applications, in OBC, DC/DC for EV, easing the compliance to IEC-60664-1.
AEC-Q101 qualified
No or negligible reverse recovery
Switching behaviour independent of temperature
Robust high voltage periphery
PPAP capable
Operating Tj from -40 °C to 175 °C
D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
ECOPACK2 compliant
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