Infineon RF Amplifier Low Noise 18.1 dB, 6-Pin 2690 MHz TSNP
- RS Stock No.:
- 258-0655
- Mfr. Part No.:
- BGA5H1BN6E6327XTSA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 reel of 12000 units)*
HK$31,572.00
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Units | Per unit | Per Reel* |
|---|---|---|
| 12000 - 12000 | HK$2.631 | HK$31,572.00 |
| 24000 - 24000 | HK$2.578 | HK$30,936.00 |
| 36000 + | HK$2.501 | HK$30,012.00 |
*price indicative
- RS Stock No.:
- 258-0655
- Mfr. Part No.:
- BGA5H1BN6E6327XTSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Amplifier Type | Low Noise | |
| Product Type | RF Amplifier | |
| Operating Frequency | 2690 MHz | |
| Technology | Silicon Germanium | |
| Gain | 18.1dB | |
| Minimum Supply Voltage | 1.5V | |
| Package Type | TSNP | |
| Pin Count | 6 | |
| Maximum Supply Voltage | 3.6V | |
| Noise Figure | 1.2dB | |
| P1dB - Compression Point | 60mW | |
| Third Order Intercept OIP3 | -6dBm | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 85°C | |
| Standards/Approvals | JEDEC47/20/22 | |
| Series | BGA5H1BN6 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Amplifier Type Low Noise | ||
Product Type RF Amplifier | ||
Operating Frequency 2690 MHz | ||
Technology Silicon Germanium | ||
Gain 18.1dB | ||
Minimum Supply Voltage 1.5V | ||
Package Type TSNP | ||
Pin Count 6 | ||
Maximum Supply Voltage 3.6V | ||
Noise Figure 1.2dB | ||
P1dB - Compression Point 60mW | ||
Third Order Intercept OIP3 -6dBm | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 85°C | ||
Standards/Approvals JEDEC47/20/22 | ||
Series BGA5H1BN6 | ||
Automotive Standard No | ||
The Infineon high gain low noise amplifier for LTE high band is LTE data rate can be significantly improved by using the Low Noise Amplifier. The integrated bypass function
increases the overall system dynamic range and leads to more flexibility in the RF front-end. In high gain mode the LNA offers best Noise Figure to ensure high data rates even on the LTE cell edge. Closer to the base station the bypass mode can be activated reducing current consumption.
Low current consumption of 8.5 mA
Multi-state control: Bypass- and high gain-Mode
Ultra small TSNP-6-10 leadless package
RF output internally matched to 50 Ohm
Low external component count
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