Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	NVRAM
	Memory Size	4MB
	Organisation	512 k x 8 Bit
	Interface Type	Parallel
	Data Bus Width	8bit
	Maximum Random Access Time	45ns
	Mount Type	Surface
	Package Type	TSOP
	Pin Count	44
	Width	10.26 mm
	Length	18.51mm
	Height	1.04mm
	Standards/Approvals	No
	Maximum Operating Temperature	85°C
	Number of Words	512K
	Automotive Standard	No
	Supply Current	70mA
	Number of Bits per Word	8
	Minimum Operating Temperature	-40°C
	Maximum Supply Voltage	3.6V
	Minimum Supply Voltage	2.7V

	Select all
	Brand Infineon
	Product Type NVRAM
	Memory Size 4MB
	Organisation 512 k x 8 Bit
	Interface Type Parallel
	Data Bus Width 8bit
	Maximum Random Access Time 45ns
	Mount Type Surface
	Package Type TSOP
	Pin Count 44
	Width 10.26 mm
	Length 18.51mm
	Height 1.04mm
	Standards/Approvals No
	Maximum Operating Temperature 85°C
	Number of Words 512K
	Automotive Standard No
	Supply Current 70mA
	Number of Bits per Word 8
	Minimum Operating Temperature -40°C
	Maximum Supply Voltage 3.6V
	Minimum Supply Voltage 2.7V

Datasheet CY14B104LA-ZS25XI

The Cypress CY14B104LA/CY14B104NA is a fast static RAM (SRAM), with a non-volatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16-bits each. The embedded non-volatile elements incorporate QuantumTrap technology, producing reliable non-volatile memory. The SRAM provides infinite read and write cycles, while independent non-volatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the non-volatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the non-volatile memory. Both the STORE and RECALL operations are also available under software control.

Infineon 4 MB 45 ns NVRAM 44-Pin TSOP

Related links