Infineon 4 MB SPI FRAM 8-Pin SOIC

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Subtotal (1 tube of 94 units)*

HK$20,895.918

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  • 658 unit(s) ready to ship from another location
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Units
Per unit
Per Tube*
94 - 94HK$222.297HK$20,895.92
188 - 282HK$217.851HK$20,477.99
376 +HK$213.495HK$20,068.53

*price indicative

RS Stock No.:
188-5304
Mfr. Part No.:
CY15B104Q-SXI
Manufacturer:
Infineon
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Brand

Infineon

Product Type

FRAM

Memory Size

4MB

Organisation

512 k x 8 Bit

Interface Type

SPI

Data Bus Width

8bit

Maximum Random Access Time

16ns

Mount Type

Surface

Maximum Clock Frequency

40MHz

Package Type

SOIC

Pin Count

8

Length

5.3mm

Height

1.78mm

Standards/Approvals

No

Width

5.3 mm

Maximum Operating Temperature

85°C

Number of Bits per Word

8

Number of Words

512K

Minimum Operating Temperature

-40°C

Maximum Supply Voltage

3.6V

Automotive Standard

No

Minimum Supply Voltage

2V

COO (Country of Origin):
US

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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