STMicroelectronics Isolated STripFET 2 Type N-Channel Power MOSFET, 4 A, 60 V Enhancement, 8-Pin SOIC
- RS Stock No.:
- 920-6557
- Mfr. Part No.:
- STS4DNF60L
- Manufacturer:
- STMicroelectronics
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Bulk discount available
Subtotal (1 reel of 2500 units)*
HK$16,317.50
FREE delivery for orders over HK$250.00
In Stock
- Plus 10,000 unit(s) shipping from 26 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | HK$6.527 | HK$16,317.50 |
| 5000 - 22500 | HK$6.331 | HK$15,827.50 |
| 25000 + | HK$5.698 | HK$14,245.00 |
*price indicative
- RS Stock No.:
- 920-6557
- Mfr. Part No.:
- STS4DNF60L
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | STripFET | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 55mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Minimum Operating Temperature | 150°C | |
| Maximum Gate Source Voltage Vgs | 15 V | |
| Maximum Power Dissipation Pd | 2W | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Width | 4 mm | |
| Length | 5mm | |
| Height | 1.25mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series STripFET | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 55mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Minimum Operating Temperature 150°C | ||
Maximum Gate Source Voltage Vgs 15 V | ||
Maximum Power Dissipation Pd 2W | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Width 4 mm | ||
Length 5mm | ||
Height 1.25mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel STripFET™ Dual MOSFET, STMicroelectronics
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MOSFET Transistors, STMicroelectronics
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