STMicroelectronics Isolated STripFET 2 Type N-Channel Power MOSFET, 4 A, 60 V Enhancement, 8-Pin SOIC STS4DNF60L

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HK$79.50

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5 - 620HK$15.90HK$79.50
625 - 1245HK$15.48HK$77.40
1250 +HK$15.26HK$76.30

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Packaging Options:
RS Stock No.:
485-8358
Distrelec Article No.:
304-42-969
Mfr. Part No.:
STS4DNF60L
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

60V

Series

STripFET

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

55mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2W

Maximum Gate Source Voltage Vgs

15 V

Typical Gate Charge Qg @ Vgs

15nC

Minimum Operating Temperature

150°C

Maximum Operating Temperature

-55°C

Transistor Configuration

Isolated

Width

4 mm

Length

5mm

Standards/Approvals

No

Height

1.25mm

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel STripFET™ Dual MOSFET, STMicroelectronics


STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics


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