Vishay Si7850DP Type N-Channel MOSFET, 6.2 A, 60 V Enhancement, 8-Pin SO-8

The image is for reference only, please refer to product details and specifications

Bulk discount available

Subtotal (1 reel of 3000 units)*

HK$19,545.00

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 12 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
3000 - 3000HK$6.515HK$19,545.00
6000 - 9000HK$6.319HK$18,957.00
12000 +HK$6.13HK$18,390.00

*price indicative

RS Stock No.:
919-0830
Mfr. Part No.:
SI7850DP-T1-E3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6.2A

Maximum Drain Source Voltage Vds

60V

Package Type

SO-8

Series

Si7850DP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1.8W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

18nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

4.9mm

Height

1.04mm

Width

5.89 mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links