Vishay TrenchFET Type N-Channel Power MOSFET, 5.3 A, 60 V Enhancement, 8-Pin SO-8

The image is for reference only, please refer to product details and specifications

Bulk discount available

Subtotal (1 reel of 2500 units)*

HK$11,312.50

Add to Basket
Select or type quantity
Orders below HK$250.00 (exc. GST) cost HK$50.00.
Temporarily out of stock
  • 2,500 unit(s) shipping from 23 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
2500 - 2500HK$4.525HK$11,312.50
5000 - 22500HK$4.434HK$11,085.00
25000 +HK$4.345HK$10,862.50

*price indicative

RS Stock No.:
180-7298
Mfr. Part No.:
SI4900DY-T1-E3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

5.3A

Maximum Drain Source Voltage Vds

60V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.058Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

13nC

Maximum Power Dissipation Pd

3.1W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

IEC 61249-2-21

Width

4 mm

Height

1.35mm

Length

4.8mm

Automotive Standard

No

The Vishay Siliconix SI4900DY series TrenchFET dual N channel power MOSFET has drain to source voltage of 60 V. It is used in LCD TV and CCFL inverter.

Pb-free

Halogen free

Related links

Recently viewed