Vishay Si7850DP Type N-Channel MOSFET, 6.2 A, 60 V Enhancement, 8-Pin SO-8 SI7850DP-T1-E3

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HK$56.50

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Per Pack*
5 - 745HK$11.30HK$56.50
750 - 1495HK$11.10HK$55.50
1500 +HK$10.90HK$54.50

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Packaging Options:
RS Stock No.:
710-4764
Mfr. Part No.:
SI7850DP-T1-E3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6.2A

Maximum Drain Source Voltage Vds

60V

Package Type

SO-8

Series

Si7850DP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

18nC

Maximum Power Dissipation Pd

1.8W

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

4.9mm

Width

5.89 mm

Height

1.04mm

Standards/Approvals

No

Automotive Standard

No

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor


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