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Microchip Single DN2625 1 Type N-Channel Power MOSFET, 1.1 A, 250 V Depletion, 8-Pin DFN

RS Stock No.:: 916-3725P
Mfr. Part No.:: DN2625DK6-G
Manufacturer:: Microchip

Microchip Single DN2625 1 Type N-Channel Power MOSFET, 1.1 A, 250 V Depletion, 8-Pin DFN

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Subtotal 10 units (supplied in a tray)*

HK$223.34

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In Stock

1,410 unit(s) ready to ship from another location

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Units	Per unit
10 - 20	HK$22.334
25 +	HK$21.888

*price indicative

RS Stock No.:: 916-3725P
Mfr. Part No.:: DN2625DK6-G
Manufacturer:: Microchip

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Microchip
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	1.1A
	Maximum Drain Source Voltage Vds	250V
	Package Type	DFN
	Series	DN2625
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	3.5Ω
	Channel Mode	Depletion
	Forward Voltage Vf	1.8V
	Typical Gate Charge Qg @ Vgs	7.04nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Transistor Configuration	Single
	Standards/Approvals	No
	Height	0.85mm
	Length	5.1mm
	Number of Elements per Chip	1
	Automotive Standard	No

	Select all
	Brand Microchip
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 1.1A
	Maximum Drain Source Voltage Vds 250V
	Package Type DFN
	Series DN2625
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 3.5Ω
	Channel Mode Depletion
	Forward Voltage Vf 1.8V
	Typical Gate Charge Qg @ Vgs 7.04nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Transistor Configuration Single
	Standards/Approvals No
	Height 0.85mm
	Length 5.1mm
	Number of Elements per Chip 1
	Automotive Standard No

DN2625 N-Channel MOSFET Transistors

The Microchip DN2625 is a low threshold depletion-mode (normally-on) MOSFET transistor utilizing an advanced vertical DMOS structure. The design combines the power handling capabilities of a Bipolar Transistor with the high input impedance and positive temperature coefficient of MOS devices.

Features

Low Gate Threshold Voltage

Designed to be Source-Driven

Low Switching Losses

Low Effective Output Capacitance

Designed for Inductive Loads

MOSFET Transistors, Microchip

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