Infineon CoolMOS CE Type N-Channel MOSFET, 18.5 A, 550 V Enhancement, 3-Pin TO-220 IPP50R190CEXKSA1

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Subtotal (1 pack of 10 units)*

HK$117.10

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Per Pack*
10 - 10HK$11.71HK$117.10
20 - 20HK$11.42HK$114.20
30 +HK$11.24HK$112.40

*price indicative

Packaging Options:
RS Stock No.:
914-0227
Distrelec Article No.:
304-44-440
Mfr. Part No.:
IPP50R190CEXKSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

18.5A

Maximum Drain Source Voltage Vds

550V

Package Type

TO-220

Series

CoolMOS CE

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

190mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

127W

Typical Gate Charge Qg @ Vgs

47.2nC

Forward Voltage Vf

0.85V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

10.36mm

Height

15.95mm

Width

4.57 mm

Standards/Approvals

No

Automotive Standard

No

Infineon CoolMOS™ CE Power MOSFET


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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