Infineon CoolMOS CE Type N-Channel MOSFET, 4.8 A, 550 V Enhancement, 4-Pin SOT-223

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HK$3,999.00

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Units
Per unit
Per Reel*
3000 - 12000HK$1.333HK$3,999.00
15000 +HK$1.306HK$3,918.00

*price indicative

RS Stock No.:
168-5922
Mfr. Part No.:
IPN50R1K4CEATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.8A

Maximum Drain Source Voltage Vds

550V

Package Type

SOT-223

Series

CoolMOS CE

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

1.4Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

5W

Typical Gate Charge Qg @ Vgs

8.2nC

Forward Voltage Vf

0.83V

Maximum Operating Temperature

150°C

Height

1.7mm

Standards/Approvals

No

Width

3.7 mm

Length

6.7mm

Automotive Standard

No

COO (Country of Origin):
CN

Infineon CoolMOS™ CE Power MOSFET


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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