N-Channel MOSFET, 5.7 A, 800 V, 3-Pin DPAK Infineon IPD80R1K0CEATMA1

RS Stock No.:: 914-0223
Mfr. Part No.:: IPD80R1K0CEATMA1
Manufacturer:: Infineon

N-Channel MOSFET, 5.7 A, 800 V, 3-Pin DPAK Infineon IPD80R1K0CEATMA1

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Price Each (In a Pack of 10)

HK$9.37

2340 In stock for delivery within 3 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over HK$850.00

Units	Per unit	Per Pack**
10 - 620	HK$9.37	HK$93.70
630 - 1240	HK$9.13	HK$91.30
1250 +	HK$8.99	HK$89.90

**price indicative

RS Stock No.:: 914-0223
Mfr. Part No.:: IPD80R1K0CEATMA1
Manufacturer:: Infineon

IPD80R1K0CE MOSFET CoolMOS CE
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	5.7 A
Maximum Drain Source Voltage	800 V
Package Type	DPAK (TO-252)
Series	CoolMOS™ CE
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	950 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.9V
Minimum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	83 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Transistor Material	Si
Width	6.22mm
Length	6.73mm
Typical Gate Charge @ Vgs	31 nC @ 10 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.2V
Height	2.41mm

N-Channel MOSFET, 5.7 A, 800 V, 3-Pin DPAK Infineon IPD80R1K0CEATMA1

FREE delivery for orders over HK$850.00

Infineon CoolMOS™ CE Power MOSFET