Infineon CoolMOS CE Type N-Channel MOSFET, 3.9 A, 800 V Enhancement, 3-Pin TO-252 IPD80R1K4CEATMA1
- RS Stock No.:
- 214-4396
- Mfr. Part No.:
- IPD80R1K4CEATMA1
- Manufacturer:
- Infineon
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Subtotal (1 pack of 15 units)*
HK$127.695
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In Stock
- 4,980 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 615 | HK$8.513 | HK$127.70 |
| 630 - 1230 | HK$8.30 | HK$124.50 |
| 1245 + | HK$8.173 | HK$122.60 |
*price indicative
- RS Stock No.:
- 214-4396
- Mfr. Part No.:
- IPD80R1K4CEATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.9A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-252 | |
| Series | CoolMOS CE | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 63W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.35mm | |
| Standards/Approvals | No | |
| Length | 6.65mm | |
| Width | 6.42 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.9A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-252 | ||
Series CoolMOS CE | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 63W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 2.35mm | ||
Standards/Approvals No | ||
Length 6.65mm | ||
Width 6.42 mm | ||
Automotive Standard No | ||
This Infineon 800V Cool MOS CE MOSFET has high voltage capability that combines safety with performance and ruggedness to allow stable designs at highest efficiency level.
It is RoHS compliant
Related links
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- Infineon CoolMOS CE Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252
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- Infineon CoolMOS CE Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-252