N-Channel MOSFET, 120 A, 120 V, 3-Pin TO-220 Infineon IPP041N12N3GXKSA1

RS Stock No.:: 897-7311
Mfr. Part No.:: IPP041N12N3GXKSA1
Manufacturer:: Infineon

N-Channel MOSFET, 120 A, 120 V, 3-Pin TO-220 Infineon IPP041N12N3GXKSA1

Bulk discount available

Price Each (In a Pack of 2)**

HK$46.455

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FREE delivery for orders over HK$850.00

Units	Per unit	Per Pack**
2 - 12	HK$46.455	HK$92.91
14 - 24	HK$45.295	HK$90.59
26 +	HK$44.60	HK$89.20

**price indicative

RS Stock No.:: 897-7311
Mfr. Part No.:: IPP041N12N3GXKSA1
Manufacturer:: Infineon

IPI041N12N3 G, IPP041N12N3 G, IPB038N12N3 G, OptiMOS3 Power MOSFET Transistor
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	120 A
Maximum Drain Source Voltage	120 V
Package Type	TO-220
Series	OptiMOS™ 3
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	4.1 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	300 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Length	10.36mm
Maximum Operating Temperature	+175 °C
Width	4.57mm
Transistor Material	Si
Typical Gate Charge @ Vgs	158 nC
Height	15.95mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.2V

N-Channel MOSFET, 120 A, 120 V, 3-Pin TO-220 Infineon IPP041N12N3GXKSA1

FREE delivery for orders over HK$850.00

Infineon OptiMOS™3 Power MOSFETs, 100V and over