IXYS GigaMOS, HiperFET Type N-Channel MOSFET, 600 A, 40 V Enhancement, 24-Pin SMPD MMIX1T600N04T2

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HK$294.60

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1 - 4HK$294.60
5 - 9HK$287.30
10 +HK$282.80

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Packaging Options:
RS Stock No.:
875-2475
Distrelec Article No.:
302-53-513
Mfr. Part No.:
MMIX1T600N04T2
Manufacturer:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

600A

Maximum Drain Source Voltage Vds

40V

Package Type

SMPD

Series

GigaMOS, HiperFET

Mount Type

Surface

Pin Count

24

Maximum Drain Source Resistance Rds

1.3mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

830W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

590nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

25.25mm

Height

5.7mm

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series


MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

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