IXYS GigaMOS, HiperFET Type N-Channel MOSFET, 500 A, 75 V Enhancement, 24-Pin SMPD

The image is for reference only, please refer to product details and specifications

Bulk discount available
View bulk pricing option

Subtotal (1 tube of 20 units)*

HK$3,369.70

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 21 December 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
Per Tube*
20 - 20HK$168.485HK$3,369.70
40 - 60HK$163.43HK$3,268.60
80 +HK$158.525HK$3,170.50

*price indicative

RS Stock No.:
168-4790
Mfr. Part No.:
MMIX1F520N075T2
Manufacturer:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

500A

Maximum Drain Source Voltage Vds

75V

Series

GigaMOS, HiperFET

Package Type

SMPD

Mount Type

Surface

Pin Count

24

Maximum Drain Source Resistance Rds

1.6mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

545nC

Maximum Power Dissipation Pd

830W

Forward Voltage Vf

1.25V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

25.25mm

Height

5.7mm

Standards/Approvals

No

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series


MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy