IXYS GigaMOS TrenchT2 HiperFET Type N-Channel MOSFET, 310 A, 150 V Enhancement, 4-Pin SOT-227

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Subtotal (1 tube of 10 units)*

HK$4,023.70

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Units
Per unit
Per Tube*
10 - 10HK$402.37HK$4,023.70
20 - 30HK$394.33HK$3,943.30
40 +HK$386.43HK$3,864.30

*price indicative

RS Stock No.:
168-4578
Mfr. Part No.:
IXFN360N15T2
Manufacturer:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

310A

Maximum Drain Source Voltage Vds

150V

Package Type

SOT-227

Series

GigaMOS TrenchT2 HiperFET

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

4mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

715nC

Maximum Power Dissipation Pd

1.07kW

Maximum Operating Temperature

175°C

Height

9.6mm

Length

38.23mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
PH

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