IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET, 360 A, 100 V Enhancement, 4-Pin SOT-227 IXFN360N10T
- RS Stock No.:
- 125-8041
- Distrelec Article No.:
- 302-53-370
- Mfr. Part No.:
- IXFN360N10T
- Manufacturer:
- IXYS
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 unit)*
HK$223.00
Add 2 units to get free delivery
In Stock
- 13 unit(s) ready to ship from another location
- Plus 1,215 unit(s) shipping from 04 March 2026
- Plus 10 unit(s) shipping from 15 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 2 | HK$223.00 |
| 3 - 4 | HK$217.40 |
| 5 + | HK$214.10 |
*price indicative
- RS Stock No.:
- 125-8041
- Distrelec Article No.:
- 302-53-370
- Mfr. Part No.:
- IXFN360N10T
- Manufacturer:
- IXYS
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 360A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-227 | |
| Series | GigaMOS Trench HiperFET | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 2.6mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 525nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 830W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 9.6mm | |
| Width | 25.07 mm | |
| Length | 38.23mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 360A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-227 | ||
Series GigaMOS Trench HiperFET | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 2.6mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 525nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 830W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 9.6mm | ||
Width 25.07 mm | ||
Length 38.23mm | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Related links
- IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-227
- IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-227
- IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-227 IXFN420N10T
- IXYS GigaMOS TrenchT2 HiperFET Type N-Channel MOSFET 150 V Enhancement, 4-Pin SOT-227
- IXYS GigaMOS TrenchT2 HiperFET Type N-Channel MOSFET 150 V Enhancement, 4-Pin SOT-227 IXFN360N15T2
- IXYS HiperFET Type N-Channel MOSFET 850 V Enhancement, 4-Pin SOT-227
- IXYS HiperFET Type N-Channel MOSFET 850 V Enhancement, 4-Pin SOT-227
- IXYS HiperFET Type N-Channel MOSFET 650 V Enhancement, 4-Pin SOT-227