N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 Toshiba TK31E60W,S1VX(S

RS Stock No.:: 827-6182
Mfr. Part No.:: TK31E60W,S1VX(S
Manufacturer:: Toshiba

N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 Toshiba TK31E60W,S1VX(S

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Bulk discount available

Price Each (In a Pack of 2)**

HK$37.05

12 In stock for delivery within 3 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over HK$850.00

Units	Per unit	Per Pack**
2 - 8	HK$37.05	HK$74.10
10 - 18	HK$36.15	HK$72.30
20 - 48	HK$35.25	HK$70.50
50 - 98	HK$34.35	HK$68.70
100 +	HK$33.50	HK$67.00

**price indicative

RS Stock No.:: 827-6182
Mfr. Part No.:: TK31E60W,S1VX(S
Manufacturer:: Toshiba

TK31E60W, MOSFET Silicon N-Channel MOS (DTMOS IV)
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	31 A
Maximum Drain Source Voltage	600 V
Package Type	TO-220
Series	TK
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	88 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.7V
Maximum Power Dissipation	230 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Length	10.16mm
Typical Gate Charge @ Vgs	86 nC @ 10 V
Width	4.45mm
Number of Elements per Chip	1
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Height	15.1mm

N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 Toshiba TK31E60W,S1VX(S

FREE delivery for orders over HK$850.00

MOSFET N-Channel, TK3x Series, Toshiba