N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 Toshiba TK31E60W,S1VX(S

RS Stock No.:: 827-6182
Mfr. Part No.:: TK31E60W,S1VX(S
Manufacturer:: Toshiba

N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 Toshiba TK31E60W,S1VX(S

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12 In stock for delivery within 3 working days

Added

Price Each (In a Pack of 2)

HK$41.15

Units	Per unit	Per Pack*
2 - 8	HK$41.15	HK$82.30
10 - 18	HK$40.125	HK$80.25
20 - 48	HK$39.125	HK$78.25
50 - 98	HK$38.15	HK$76.30
100 +	HK$37.19	HK$74.38
*price indicative

RS Stock No.:: 827-6182
Mfr. Part No.:: TK31E60W,S1VX(S
Manufacturer:: Toshiba

Product overview and Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

MOSFET N-Channel, TK3x Series, Toshiba

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Toshiba

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	31 A
Maximum Drain Source Voltage	600 V
Series	TK
Package Type	TO-220
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	88 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.7V
Maximum Power Dissipation	230 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Transistor Material	Si
Length	10.16mm
Typical Gate Charge @ Vgs	86 nC @ 10 V
Width	4.45mm
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Height	15.1mm